semiconductor nonlinear established donors capping composites bandgap mechanism impurities wavelength battery bonding bulk adsorbates piezoelectric nanoparticle doping exciton electrical UV oxygen mobility recombination native optical characterize structures 3.37 eV nanorod energy low stability polymer morphology luminescence sensor surface cheap cost- effective room temperature degradation film 60 meV resistivity Hydrothermal defects modification states laser Hexagonal Wurtzite irradiate diode n- type electronics semiconductor nonlinear established donors capping composites bandgap mechanism impurities wavelength battery bonding bulk adsorbates piezoelectric nanoparticle doping exciton electrical UV oxygen mobility recombination native optical characterize structures 3.37 eV nanorod energy low stability polymer morphology luminescence sensor surface cheap cost- effective room temperature degradation film 60 meV resistivity Hydrothermal defects modification states laser Hexagonal Wurtzite irradiate diode n- type electronics
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semiconductor
nonlinear
established
donors
capping
composites
bandgap
mechanism
impurities
wavelength
battery
bonding
bulk
adsorbates
piezoelectric
nanoparticle
doping
exciton
electrical
UV
oxygen
mobility
recombination
native
optical
characterize
structures
3.37 eV
nanorod
energy
low stability
polymer
morphology
luminescence
sensor
surface
cheap
cost-effective
room temperature
degradation
film
60 meV
resistivity
Hydrothermal
defects
modification
states
laser
Hexagonal Wurtzite
irradiate
diode
n-type
electronics